Abstract
A novel post-etching treatment of small windows in oxide for selective epitaxial Si growth is presented. The treatment is a short reactive ion etch in a Cl2 plasma, applied after window etching. Transmission electron microscopy (TEM) analysis of grown structures shows that high quality epitaxy is obtained in windows as small as 46 nm, indicating effective removal of fluorocarbon contamination. X-ray photoemission spectroscopy (XPS) analysis of the Si surface confirms this. From electrical measurements on small Si point contacts fabricated with this treatment, we deduce that the constriction is high quality single-crystalline Si, in agreement with the TEM and XPS results.
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