Abstract
Recently, our group has been developing novel semiconductor photodetectors and image sensors based on silicon-on-insulator (SOI) substrate. The interface coupled photodetector (ICPD) utilizes the interface coupling effect in SOI and has achieved high responsivity. It further demonstrates tunable response spectrum when combining SOI and MoS <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</inf> . Based on dual photogating effect, the wavelength photodetector has been demonstrated with the output signal only sensitive to the wavelength instead of intensity of the light. The deep depletion effect in SOI has been discovered and utilized for photodetection application with tunable responsivity and sensing range. In the end, this effect is further used to demonstrate photoelectron in-situ sensing device (PISD) for one-transistor active-pixel sensor (1T-APS).
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