A study of Si epitaxial layer growth on SOI wafers prepared by SIMOX

Abstract

The epitaxial Si layers were deposited onto silicon on insulator (SOI) substrates by chemical vapor deposition technology, and SOI substrates were manufactured with separation by implantation of oxygen technology. The dislocations and stacking faults of epitaxial Si layer and substrate were examined and their densities were calculated, respectively. The surfaces of epitaxial Si layer and SOI substrate were studied by atomic force microscopy. The SOI substrates and the epitaxial Si layers were characterized by Rutherford backscattering and channeling spectroscopy. Transmission electron microscopy was used to observe the defect in epitaxial layer. The result shows that the defects in the epitaxial Si layer on low dose substrate are less than those in the epitaxial Si layer on standard dose substrate, and also that the defects in low dose substrate are less than those in standard dose substrate. The crystallinity of epitaxial Si layer on low dose substrate is better than that of epitaxial Si layer on standard dose substrate.