Abstract
This paper describes the fabrication and characterization of novel photodefined polymer-embedded vias for silicon interposers. The fabricated polymer-embedded vias can help obtain ∼3.8× reduction in via-to-via capacitance as well as a reduction in insertion loss compared to TSVs with a silicon dioxide liner. Polymer-embedded vias 100 μm in diameter, 270 μm tall and at 250 μm pitch were fabricated. Resistance and leakage measurements were performed for the fabricated polymer-embedded vias. The average value of the measured resistance for 20 polymer-embedded vias is 2.54 mΩ and the maximum measured via-to-via leakage current for 10 pairs of polymer-embedded vias is 80.8 pA for an applied voltage of 200 V.
Sign-in/Register to access full text options 
Free) 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
