Abstract
A low resistance and thermally stable TiSi2 self aligned silicide (SALICIDE) for deep submicron p+ and n+ dual gate complementary metal-oxide semiconductors (CMOS) has been developed. This was achieved through the use of a novel oxygen free silicidation (OFS) process using a reaction between a titanium included nitrogen ( Tix Ny ) and an oxygen free poly-Si-gate. The oxygen free poly-Si was realized using low pressure chemical vapor deposition (LPCVD) system with nitrogen flow Load-Lock chamber. The OFS TiSi2 film did not agglomerate after the treatment of the RTA at 1050° C for 20 s in a N2 atmosphere and the additional furnace annealing at 900° C for 30 min. in a N2 atmosphere. For both n+ and p+ gates, low sheet resistances (about 2.8 Ω /square.) were achieved under the 0.2 µ m size.
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