Novel multi-bit memory device using metal/PVDF–TrFE/graphene stack

Abstract

Novel multi-bit memory using a graphene/PVDF-TrFE stack has been demonstrated.Two polarization generate four states of junction combinations in the graphene.The four states are maintained up to 1000 sec and 100 times endurance.Flexible or a low cost and medium density memory would be suitable applications. Novel multi-bit memory device using a graphene/a ferroelectric polymer stack has been successfully demonstrated. The dual top gate electrodes are used to change the Fermi level of graphene by polarizing PVDF-TrFE layer. Two different polarization states in the same graphene channel generate four states of junction combinations, resulting in four channel resistance values. Four different states are maintained up to 1000s and 100 cycles of endurance has been confirmed. This device can be utilized in high performance memory device with high bit density per memory cell since the response time of ferroelectric polymer is faster than 10ns.