Novel mid-IR laser based on hybrid AlGaAsSb/InAs/CdMgSe heterostructure

Abstract

We report on the development of a novel design of a mid-IR laser combining III–V and II–VI compounds in a “hybrid” double heterostructure. It possesses large (∼1.5 eV) potential barriers both for injected electrons and holes, suppressing their leakage from the active region, and provides strong optical confinement. An AlGaAsSb/InAs/CdMgSe laser diode with a III–V/II–VI heterovalent interface at the 0.6 μm -InAs active region has been grown by molecular beam epitaxy on an InAs substrate. Despite a far from optimal defect density at the CdMgSe/InAs interface and high losses inherent for bulk active region of the laser, the structure demonstrates lasing at ∼2.8 μm (up to 100 K ) in the pulsed regime with a threshold current density of 3–4 kA/cm 2 . Type II InSb monolayer insertions into an InAs layer show bright photoluminescence at 3.8 μm (77 K ), confirming the great potential of the InAs-based nanostructure active region for longer wavelength applications.