Abstract
The integration of mid-IR lasers with Si-based platforms is needed for the development of smart sensor grids. Here we review our recent results on GaSb-based laser diodes (LDs) and InAs/AlSb quantum-cascade lasers (QCLs), grown on on-axis (001) Si substrates by molecular-beam epitaxy, and covering emission wavelengths from 2 to 10 µm. Threshold current densities well below 1 kA.cm-2 are achieved in both cases. Ridge LDs operate cw up to 80 °C and emit around 10 mW at room temperature whereas QCLs exhibit performances comparable to their counterpart grown on native InAs substrates. In addition, we will demonstrate that etching facets is a viable route toward cavity definition.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
