Abstract
A novel method for fabricating nanostructures based on the interaction of an electron beam with the metal–oxide–semiconductor material system has been demonstrated. The electron beam produces a stable charge near the oxide–semiconductor interface which modulates the surface potential creating a quasi-one-dimensional potential valley. Electrical transport measurements conducted on the post-irradiated silicon metal–oxide–semiconductor field-effect transistors (MOSFETs) reveal structure in the conductance which is not present in an unexposed device, indicating that quasi-one-dimensional structures can be created directly in the gate of a silicon MOSFET.
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