Abstract
Based on numerical modeling, a novel method for melt stirring in the directional solidification method of multicrystalline silicon is proposed. It consists of two electrodes in contact with the free melt surface. The whole melt is placed in a low intensity vertical magnetic field and an electrical DC current passes through the electrodes. It was found that even a small magnetic field (10mT) and an electrical current in electrodes of max 10A can produce a significant stirring effect. The melt stirring is expected to influence the dopant and impurities distribution in a beneficial way. The influence of melt stirring on the interface shape was also studied and it was found that large currents (5–10A) make a significant impact on interface shape, but small values of electrical current (2A) can be beneficial for interface shape and deflection.
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