Abstract
A novel low-temperature polycrystalline-silicon thin-film-transistor pixel circuit for 3D active-matrix organic light-emitting diode (AMOLED) displays is presented in this work. The proposed pixel circuit employs high frame rate (240 Hz) emission driving scheme and only needs 3.5 $~\mu\hbox{s}$ for input data period. Thus, 3D AMOLED displays can be realized under high speed operations. The simulation results demonstrate excellent stability in the proposed pixel circuit. The relative current error rate is only 0.967% under the threshold voltage deviation ( $\Delta {{\rm V}_{{\rm TH}\_{\rm DTFT}}} = {\pm} \hbox{0.33 V}$ ) of driving TFT. With an OLED threshold voltage detecting architecture, the OLED current can be increased with the increased OLED threshold voltage to compensate for the OLED luminance degradation. The proposed pixel circuit can therefore effectively compensate for the DTFT threshold voltage shift and OLED electric degradation at the same time.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
