Abstract
A novel low temperature (350°C) RF plasma technique using a NH3−N2 gas mixture was used to anneal bipolar structures. Vertical pnp transistors made with high energy ion implantation and possessing poor electrical characteristics have been dramatically improved after 30min annealing with this new technique. The value of the ideality factor of the base current which was about 1.4 before annealing approached the ideal value of 1.0 after 30min annealing.
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