Abstract
This contribution presents simulation results, implementation, and first tests of a monolithic detector developed at KIT. It consists of a sensor diode tightly integrated with an analogue front-end based on SiGe (Silicon-Germanium) SG13G2 130 nm BiCMOS technology produced at the Leibniz Institute for High Performance Microelectronics (IHP). The pixel size is 100 μm × 100 μm, and the nwell charge collection node dimensions were reduced to 10 μm × 10 μm. We investigate the influence of this approach on sensor performance, spatial resolution via charge sharing and timing behaviour.
Published Version
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