Abstract

In this work, four designs of (Bi)CMOS on-chip antenna (OCA) at 90GHz and 140GHz are shown and compared, aiming at the difficult task of broadside radiation (off the top chip metal surface). A bowtie-shaped slot antenna is fabricated and expected to offer a gain of −1.5dB at 90GHz and 30GHz impedance bandwidth. Another design of slot antenna backed by a cavity, which is fully isolated from the circuits, gives a gain of −2 dB at 140GHz and 5 GHz bandwidth. Additionally, a design of a slot antenna based on an integrated waveguide in (Bi)CMOS showing −1 dB gain is proposed. At last, a proposed E-shaped patch antenna, which only occupies 0.7 mm × 0.7 mm area, shows −2 dB gain with 10 GHz bandwidth.

Highlights

  • Thanks to the fast advancement in semiconductor technology, research efforts in radio frequency ICs have started to focus on the millimeter wave spectrum

  • To integrate with generation mmWave singlechip radio [1,2], On-chip antennas (OCA) have the clear advantage over antennas on printed circuit boards (PCBs) in terms of reduction of feed loss due to the absence of long interconnection

  • The accepted gain pattern in the E and H planes of the Eshape patch antenna are shown in Fig. 7(c) and the simulation results are verified by two simulators, Computer Simulation Technology (CST) and HFSS

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Summary

INTRODUCTION

Thanks to the fast advancement in semiconductor technology, research efforts in radio frequency ICs have started to focus on the millimeter wave (mmWave) spectrum. To integrate with generation mmWave singlechip radio [1,2], OCAs have the clear advantage over antennas on printed circuit boards (PCBs) in terms of reduction of feed loss due to the absence of long interconnection. It is difficult to achieve high efficiency for (Bi)CMOS OCA because of the low resistivity substrate, and for the extremely thin thickness provided for antenna (between M1 and M6, shown in Fig. 1) and area size restriction. One of the major concerns in the integration of OCA is the electromagnetic interference (EMI) resulting from mutual coupling between the antenna and the high frequency front end or other CMOS circuits, that could be significant due to substrate coupling, which could degrade the proper operating of the integrated antenna. The silicon substrate has the thickness of 275 μm with the dielectric constant of 11.9 and resistivity of 12.5 ȍcm

CAVITY-BACKED SLOT ANTENNA
EXTREMELY FLAT WAVEGUIDE SLOT ANTENNA
E-SHAPE PATCH ANTENNA
CONCLUSION
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