Novel Gate-All-Around High-Voltage Thin-Film Transistor With T-Shaped Metal Field Plate Design

Abstract

A novel gate-all-around (GAA) high-voltage thin-film transistor (HVTFT) with the T-shaped metal field plate (MFP) design results in a high breakdown voltage ( $V_{\rm BD})_{_{_{}}}$ of 119.9 V and a low specific ON-resistance ( $R_{\rm SP})$ of 8.4 m $\Omega \cdot ~\mathrm{cm}^{2}$ . This T-shaped MFP GAA HVTFT solves the $V_{{\rm {BD}}}$ – $R_{\rm SP}$ tradeoff problems and exhibits superior gate control performance, which leads to excellent electrical characteristics such as a better ON/OFF ratio of $> 10^{10}$ and a lower subthreshold slope of 154.4 mV/decade than the conventional planar structure.