Novel GaAs Metal–Semiconductor Field-Effect Transistors with InGaP/GaAs Multiple Quantum Barrier Capping and Buffer Layers

Abstract

We present a novel GaAs metal–semiconductor field-effect transistor (MESFET) with InGaP/GaAs multiple quantum barrier (MQB) capping and buffer layers. The MQB structure with (29; 6, 5, 7; 8, 8, 1; 6, 5, 7; 29) periodic stacks was designed to increase effective-potential-barrier height. We demonstrate that, by using the InGaP/GaAs MQB capping layer, the gate Schottky barrier performance and gate leakage current are improved.