Novel functional devices of transition metal dichalcogenide monolayers

Abstract

We combine transition metal dichalcogenide monolayers (MoS<inf>2</inf>, MoSe<inf>2</inf>, WS<inf>2</inf>, and WSe<inf>2</inf>) with electric double layer based gating technique, resulting in novel functional devices such as metallic transport, ambipolar transistors, high carrier mobility transistors, high gain CMOS-like inverters, flexible/stretchable devices, photo detectors and light-emitting devices. Particularly, we realized circularly polarized electroluminescence at room temperature using strong electric field and strain effect, which provide a new pathway for practical chiral light sources based on monolayer semiconductors.