Abstract
In this work we discuss a structure of a p-doped Poly-Si layer and a Ni layer deposited onto n-type 4H-SiC in order to form a Schottky-like contact which undergoes a specific temperature budget to establish a temperature independent forward characteristic of the formed rectifying junction. The results of our treatment is discussed in terms of a hetero junction, though temperature treated NiSi-layers normally are expected to show an ohmic behavior.
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