Abstract
Ohmic contact formation mechanism of Ni on n-type 4H–SiC is proposed by comparing the electrical properties with microstructural change. The ohmic behavior was observed at temperatures higher than 900 °C, but Ni2Si phase, as formerly reported to be responsible for ohmic contact, was formed after annealing at 600 °C. The higher work function of Ni2Si than Ni and the observation of graphite phase on the surface of Ni silicide after annealing at 950 °C support that a number of carbon vacancies were produced below the contact, playing a key role in forming an ohmic contact through the reduction of effective Schottky barrier height for the transport of electrons.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
