Abstract

Abstract : We have used an external electric field to control important properties of semiconductor quantum wells. Specifically: (1) We have modified the exciton-exciton interaction. This interaction is determined by many-body effects, which depend on the overlap between the exciton's electron and hole wavefunctions, and is manifested in the energy difference between photoluminescence spectra with different polarizations. In time-resolved photoluminescence (PL) experiments with circular polarization we have observed that spectral difference, which we controlled by an electric field applied to GaAs-GaAlAs coupled quantum wells. Our results confirm the predictions of theory but also point out its limitations to fully explain our observations. (2) We have reversed the valence-band ordering in strained-layer quantum wells, thus 'undoing' the effects of strain. To prove the concept we have used strained InGaAs-InAlAs quantum wells in which the light-hole state is the ground state in the valence band. Photocurrent measurements under various fields have shown a change in the valence-band states that contribute to the fundamental (lowest-energy) transition, from light-hole states to heavy-hole states. This result opens the door to reversing the polarization of light emission in quantum wells, from TM to TE, which could find application in optical modulators. (3) We have shown the presence of low-temperature exciton-photon coupling in microcavities using PL spectroscopy. Because of thermalization until now it has been almost impossible to use PL to study at low temperature (T = 20K or less) the coupling of excitons and photons. We have determined the difference between the lowest-energy PL peak from a quantum well-microcavity system and that of an isolated quantum well, at various temperatures. This difference is constant with T when a field is applied but is T dependent when the field is suppressed. The maximum variation is a direct measure of the exciton-photon coupling.

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