Abstract
Energy spectra of shallow impurities (donors and acceptors) in quantum wells are studied within the effective mass approximation. New theoretical calculations on donor states in quantum wells are presented. A model potential which allows a simple and fairly accurate estimate of the entire spectrum of donors in quantum wells with intermediate width (20–300 Å) is introduced. New developments for acceptors in strained-layer quantum wells (GaAsGa 1- x In x As) are reported. The effect of biaxial strain on the electronic structure of the strained-layer quantum well is properly included.
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