Shallow impurities in semiconductor quantum wells

Abstract

Energy spectra of shallow impurities (donors and acceptors) in quantum wells are studied within the effective mass approximation. New theoretical calculations on donor states in quantum wells are presented. A model potential which allows a simple and fairly accurate estimate of the entire spectrum of donors in quantum wells with intermediate width (20–300 Å) is introduced. New developments for acceptors in strained-layer quantum wells (GaAsGa 1- x In x As) are reported. The effect of biaxial strain on the electronic structure of the strained-layer quantum well is properly included.