Abstract
New concept of triggering the fast ionization fronts in semiconductors with the field-enhanced ionization of deep electron traps is described. Closing switches designed on the base of this concept has been called the Deep Levels Dinistors, DLDs. These devises are able to form high current pulses with subnanosecond risetime and low voltage drop after switching. As an instance three generators based on DLDs are described. The possibility of picosecond switching on the base of tunnel assisted impact ionization front is discussed.
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