Abstract
A high performance GaAs p-metal-semiconductor field-effect transistor (MESFET) using carbon as the p-dopant is demonstrated. The channel and contact layers were grown by metalorganic molecular beam epitaxy (MOMBE). The cap contact layer was highly doped with carbon (5×1020 cm−3) in order to minimize the parasitic resistance in the FET structure. The sheet resistivity and transfer resistance of the contacts were 220 Ω/⧠ and 0.2 Ω mm, respectively. These are comparable to values achieved on n-type GaAs. The room temperature extrinsic transconductance and K-factor values were 50 mS/mm and 165 mS/V⋅mm with 1 μm gate length and 3.5 μm source-to-drain spacings. These are the highest room temperature values ever demonstrated for p-GaAs MESFET.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.