Abstract
In this paper, the authors proposed a new double-gate 1-T DRAM cell device which has nonvolatile memory function on one gate. Due to enlarged hole capacity in the floating body by the nonvolatile function, high write1 and low write0 current (high ?Vth) could be done. By adopting non-overlap structure, device scalability was improved. Proposed device could be a very promising candidate for a future high density and high performance 1T-DRAM cell.
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