Abstract
For the first time, an insulated gate bipolar transistor with a novel buffer is proposed and verified by two-dimensional (2D) mixed device-circuit simulations. The structure of the proposed device is almost identical with that of the conventional IGBT, except for the buffer layer which is formed by employing a three-step, gradually changing doping n+ structure. Compared with the conventional IGBT, the proposed device exhibits better trade-off relation between the conduction and switching losses. The turn-off time is halved from 9.4μs of the conventional IGBT to 4.5μs of the proposed device, so the operation speed of the proposed device is greatly improved. Further, the forward blocking voltage is enormously increased from 907V of the proposed device to 1278V of the proposed device, which is required for high power operation.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
