Abstract
This article describes a novel CVD process for TiN films developed in a 300 mm Vertical Furnace. We have solved Chlorine incorporation at low temperature inside the TiN layer while at the same time the batch process yields a 3 times higher throughput per dual reactor system compared to a single wafer system with 3 chambers.We show process results for load sizes ranging from 5 to as much as 100 wafers that prove filler wafers are only required to a minimum. Applications of the developed TiN process in Metal-Insulator-Metal memory devices such as Deep Trench DRAM, Stack DRAM, as well as Control Electrodes in Charge trapping Flash memory
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