Novel Asymmetric Tunneling Devices for Low Power ULSI

Abstract

A novel device concept, the Tunnel Source (PNPN) n-MOSFET, based on the principle of band-to-band tunneling is presented in this paper. A narrow fully depleted n+ pocket at the source reduces the tunneling width as well as the potential drop at the source. As a result, this device can achieve steep sub-threshold swing (~5mv/dec) with low IOFF and improved ION over p-i-n tunneling FETs and can thus be a potential solution for low power ULSI applications.