Abstract
SummarySelf‐organized arrested precipitation technique (APT) has been successfully used for synthesis of nubbly‐like cadmium sulfoselenide (Cd(SSe)) thin film. Deposited Cd(SSe) thin films was characterized by using UV–Vis spectrophotometer, X‐ray diffraction (XRD) study, field emission scanning electron microscopy (FESEM), energy dispersive X‐ray spectroscopy (EDS) techniques. Surface profiler study revealed that thickness of deposited thin film is 793 nm. Optical absorption study indicated that, direct allowed type of transition with 1.86 eV optical band gap energy. XRD study confirmed that, deposited thin film is nanocrystalline in nature with pure hexagonal crystal structure and calculated crystallite size is 68 nm. Well‐adherent and crack free deposition on substrate surface was observed in low resolution FESEM image. High resolution FESEM image shows formation of nubbly‐like surface morphology from bunch of smaller nanospheres. EDS pattern confirms that deposited thin film is stoichiomtric in nature. Highest short circuit current density (Jsc) of 0.454 mA/cm2 and corresponding value of open circuit voltage (Voc) was 782 mV. From J–V measurement, photoconversion efficiency of 0.57% was achieved.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
