Abstract
Novel amorphous Si alloy optoelectronic integrated circuits (OEICs) were developed. The basic elements used in the amorphous OEICs were a-SiC:H p–i–n thin film light emitting diodes, dielectric optical waveguides, a-Si:H p–i–n thin film photodiodes. These elements were constructed both in the lateral and vertical configurations. It was shown that a glass substrate with a textured-surface could be used as an optical waveguide as well as a distributed Bragg reflector for amorphous OEICs.
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