Abstract
In this study, special ceramic grinding plates impregnated with diamond grit and other abrasives, as well as self-made lapping plates, were used to prepare the surface of single-crystal silicon carbide (SiC) wafers. This novel approach enhanced the process and reduced the final chemical mechanical planarization (CMP) polishing time. Two different grinding plates with pads impregnated with mixed abrasives were prepared: one with self-modified diamond + SiC and a ceramic binder and one with self-modified diamond + SiO2 + Al2O3 + SiC and a ceramic binder. The surface properties and removal rate of the SiC substrate were investigated and a comparison with the traditional method was conducted. The experimental results showed that the material removal rate (MRR) was higher for the SiC substrate with the mixed abrasive lapping plate than for the traditional method. The grinding wear rate could be reduced by 31.6%. The surface roughness of the samples polished using the diamond-impregnated lapping plate was markedly better than that of the samples polished using the copper plate. However, while the surface finish was better and the grinding efficiency was high, the wear rate of the mixed abrasive-impregnated polishing plates was high. This was a clear indication that this novel method was effective and could be used for SiC grinding and lapping.
Highlights
Single-crystal silicon carbide (SiC) is a new high-powered, next-generation semiconductor material that can be used for chip production
The material was used during the early development of the LED industry, and the flattening of SiC wafers was problematic from the very start
Mechanical polishing (MP) [7] and chemical mechanical planarization [8,9,10] are core technologies used in semiconductor manufacturing, but the material removal rate (MRR) is very low and takes a long time
Summary
Single-crystal silicon carbide (SiC) is a new high-powered, next-generation semiconductor material that can be used for chip production. Grinding and polishing are generally done using a free-abrasive slurry against a copper or cast iron lapping plate. This is not very efficient, as it takes a long time and the cost is high. Park et al [11] estimated the rate of material removal by lapping sapphire wafers Their three-body wear model used a diamond slurry on metal–resin-bound lapping plates made with copper, aluminum, or zinc powder. Three kinds of grinding pads impregnated with mixed abrasives, along with self-made lapping plates, were used for the lapping of single-crystal SiC wafers. 22..11A..PPsrresephpaaorriwinngngtthihneeSSFiiCiCgWuWraaeffee2rra, commercially available 4H-SiC 50.8 mm (two-inch) N-type substraAAtess(ss0hh0oo0ww1n)nwiinnaFsFiiuggsuuerrdee.22Taa,h, cceoowmmammfeeerrrccriieaaslllliyystaaivvvaiatiiyllaawbblleaes440HH.0--SS1ii5CC–50500.0..883 mmΩmmcm((tt,wwaoon--diinnctchhhe)) NNde--ttnyysppieety was lesssuutbbhssattrrnaatt1ee5((00c00m0011−))2.wwTaahsseuusseeuddr..fTaThcheeewrwoaauffeegrrhrrneesesiissssttiivvoiifttyythwweaasws 00a..0f0e11r55––a00f..t00e33rΩΩslciccmmin,, agannwdd tathhseeaddbeeonnussiitttyySawwa1ass nm anldleessSssztth1ha6an2n01155nmccmm, −−a2.s2.TsThhheoewsusnurfraifnacecFeriorgouuugrghehn2nebes.sssooffththeewwaaffeerraafftteerrsslliicciinnggwwaassaabboouutt SSaa 115566 nnmm aanndd SSzz 11662200 nnmm,, aass sshhoowwnn iinn FFiigguurree 22bb
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