Abstract

A 10Gb/s inductor-free transimpedance amplifier was realized in a 0.2 μm SiGe process with f/sub T/=60GHz. The input stage uses a pseudo-differential cascoded common emitter architecture that achieves both low input noise and good supply and substrate rejection. The wideband operation is assured by using input bondwire inductive peaking in conjunction with feedback capacitive peaking. Low voltage operation was achieved by eliminating the inter-stage isolation emitter followers and minimizing the capacitive load at the high impedance nodes through emitter degeneration and cross-coupled Miller capacitance neutralization.

Full Text
Published version (Free)

Talk to us

Join us for a 30 min session where you can share your feedback and ask us any queries you have

Schedule a call