Abstract
We have demonstrated a AlGaAs-AlAs DBR reflection-type two-wavelength modulator with a novel balanced cavity design. Simultaneous operations at wavelengths of around 860 and 896 nm have been achieved. By using such a new cavity design similar operating voltages have been obtained for both wavelengths. Under separate biasing voltages of 14.5 and 11 V on each quantum-well absorbing region, the maximum reflectivity changes were around 50%.
Full Text
Submitted Version (
Free)
Published Version
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call