Abstract
A novel mechanism is proposed for surface-emitting second-harmonic generation at normal incidence using L-valley intersubband transitions in AlSb/GaSb/Ga1−xAlxSb/AlSb stepped quantum wells. The calculations indicate that second-harmonic susceptibilities of at least 9×10−8 m/V should be achievable under double resonance conditions, which is comparable to the best obtainable in GaAs/Ga1−xAlxAs systems for realistic propagation angles (e.g., 45°). Besides the advantage of normal-incidence geometry, the large L-valley conduction band offset between GaSb and AlSb enables doubling to frequencies spanning the entire midwave infrared spectral region.
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