Normal dispersion silicon oxynitride microresonator Kerr frequency combs

Abstract

On-chip optical resonators have proven to be a promising platform for generating Kerr frequency combs. Whispering gallery mode resonators are particularly attractive because of their small footprint as well as low threshold and power consumption. This performance can be attributed to two characteristics: the cavity quality factor (Q) and the cavity dispersion. The input optical field into the cavity is amplified by the cavity Q, enabling nonlinear processes to occur with low input powers. In addition, the total span of the optical comb is governed by the dispersion. In an optical cavity-based comb, the dispersion is governed by the geometric dispersion of the cavity and the material dispersion. While many different materials have been explored, the realization of ultrahigh Q (UHQ) on-chip frequency comb sources is still challenging for most materials. One exception is the family of integrated silica devices. However, because the silica attracts water molecules from the ambient environment, the lifetime of the device performance is fundamentally limited, unless packaged in a controlled atmosphere. Here, we demonstrate the generation of environmentally stable frequency combs fabricated from SiO1.7N0.13 microtoroidal resonators. Due to the UHQ factors of the cavities, parametric oscillations with submicrowatt thresholds are demonstrated. Based on their geometry and material properties, the cavities have normal dispersion. However, due to avoided mode crossing, frequency combs are generated. Finally, unlike SiO2, SiO1.7N0.13 inhibits the formation of a water monolayer, allowing submicrowatt performance to be maintained for over a week in devices stored with minimal environmental controls.