Nonvolatile Static Random Access Memory Using Magnetic Tunnel Junctions with Current-Induced Magnetization Switching Architecture

Abstract

We propose and computationally analyze a nonvolatile static random access memory (NV-SRAM) cell using magnetic tunnel junctions (MTJs) with magnetic-field-free current-induced magnetization switching (CIMS) architecture. A pair of MTJs connected to the storage nodes of a standard SRAM cell with CIMS architecture enables fully electrical store and restore operations for nonvolatile logic information. A wide range of tunneling magnetoresistance (TMR) ratios and Vhalf (the bias voltage when the TMR ratio is reduced to half its original value) values are acceptable for the operation of the proposed NV-SRAM cell. Successful operation can be easily achieved when moderate TMR and Vhalf values such as 100% and 100 mV, respectively, are used. The proposed NV-SRAM is expected to be a key component of next-generation power-gating logic systems with extremely low static-power dissipation.