Nonvolatile resistive memory and synaptic learning using hybrid flexible memristor based on combustion synthesized Mn-ZnO

Abstract

Memristors have been seen as promising candidates for next-generation nonvolatile memory and neuromorphic computing. Solution-processed memristors can offer many advantages, such as low-cost fabrication, large-area uniformity, and high versatility. However, the high annealing temperature of the solution process and unsatisfactory performance are impeding the advancement of flexible memristors. In this work, the combustion method was proposed to fabricate the Mn-ZnO-based memristor without a high-temperature process on the flexible substrate. The device demonstrates stable bipolar resistive switching behavior with ultralow switching voltage (−0.6 V/0.71 V), high on/off ratio (˃ 2 × 103), multilevel storage capability, and uniform resistance distribution (σ/µ = 18%/16%). The flexible device with a bend radius of 10 mm shows no obvious performance degeneration compared with the device in the flat state. Furthermore, tunable repetitively synaptic weight was achieved by the memristor. Synaptic plasticity functions, such as excitatory postsynaptic current, paired-pulse facilitation, and learning/forgetting behaviors, have been emulated. This work provides a simple and feasible strategy for fabricating the flexible high-performance memristor, with the expectation to facilitate the development of flexible electronics.