Abstract
We report the excitation of nonstationary holographic currents in semi-insulating 6H-SiC crystal preliminarily irradiated by reactor neutrons. The currents are studied for the cases of zero and non-zero external electric fields. The dependences of the signal amplitude versus the frequency of phase modulation, light intensity, spatial frequency and amplitude of the external ac field are measured. The frequency transfer functions of the effect demonstrate unusual behaviour, namely, there are two frequency-independent regions in the diffusion regime of signal excitation and low-frequency maximum in the experiments with the applied ac field. These peculiarities are explained in the frames of a two-level model of semiconductor. Photoconductivity, diffusion length of electrons, thermal excitation rate and ionization cross section for shallow traps are estimated for the wavelength λ = 532 nm.
Published Version
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