Abstract
A mechanism of nonradiative recombination of nonequilibrium carriers in semiconductor quantum dots (QDs) is suggested and discussed. Recombination of an electron-hole pair localized in a QD occurs via Coulomb (Auger) interaction with carriers in the barrier region. It is shown that the characteristic time of such an Auger process depends on QD parameters, temperature, and carrier density in the barrier region and, under certain conditions, is shorter than the characteristic time of radiative recombination.
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