Non-Quasi-Static Small-Signal Modeling of TGRC MOSFET in Parameter Perspective for RF/Microwave Applications

Abstract

This work reported an accurate modeling of the non-quasi-static small signal model of Transparent Gate Recessed Channel (TGRC) MOSFET in parameter perspective using ATLAS-3D device simulator. From the small signal equivalent circuit, simulated and modeled results are compared at THz frequency range in terms of $\boldsymbol{Y}$ (admittance) parameters, $\boldsymbol{Z}$ (impedance) parameters and $\boldsymbol{h}$ (hybrid) parameters. The input impedance enhances by 89.4% as when gate length (L G ) reduces from 40 nm to 20 nm while it improves by 68.6% when negative junction depth (NJD) reduces from 15 nm to 5 nm in the TGRC device. Moreover, it is also observed that, admittance and hybrid parameters are significantly improved with reduced device parameter and are found in good agreement between modeled and simulated results. All modeled results show that TGRC design improves the small signal behavior for sub-20 nm regime thus, providing the detailed insight to RF engineers for RF applications.