Abstract
This paper discusses the small signal RF model of Transparent Gate Recessed Channel (TGRC) MOSFET using a 3D TCAD device simulator. Small signal model is studied in terms of microwave parameters such as S (scattering) parameters, Z (impedance) parameters, Y (admittance) parameters, and h (hybrid) parameters with an aim to analyze the behavior of TGRC MOSFET at microwave frequency. All the results of TGRC-MOSFET have been compared with Conventional Recessed Channel (CRC) MOSFET having aluminum as gate metal electrode. Modeled results have also been compared with simulation results and found good agreement with the 3D-simulation results. Moreover, it is perceived from the results that 99.4% enhancement in the input impedance of TGRC-MOSFET and input admittance is improved by 32.9% in the proposed device (TGRC-MOSFET) in comparison to CRC-MOSFET. It has also been observed that the transit (cut-off) frequency (fT) and maximum oscillator frequency (fMAX) enhances significantly by 42.85% and 123% respectively in TGRC MOSFET owing to the remarkable reduction in intrinsic capacitances. Results reveal that the proposed device design improves the small signal behavior thus, may provide detailed insight to RF engineers for microwave applications and testing of RF ports.
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