Abstract
Nonpolar bistable resistive switching behaviors of sol-gel derived bismuth titanate oxide (BTO) thin film are investigated in this study. The BTO thin film memory device without thermal treatment shows higher resistance ratio (∼ 10 4 ) than the other annealed devices. The resistive switching behavior of the Pt/BTO/LNO/Pt device is reproducible and can be traced over 100 times. Both low resistance state (ON-state) and high resistance state (OFF-state) are stable over 10 4 s under 0.3 V voltage stress at room temperature (RT) and 85°C. The retention behaviors of both memory states in the Pt/BTO/LNO/Pt device are very stable over 2 × 10 6 s at RT and 85°C, showing that the BTO thin film memory device is a good candidate for nonvolatile memory application
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