Abstract
This paper reports on a study of high-field transport in bulk GaAs on the basis of the nonparabolic balance equations recently extended to systems having a multiband structure. Nonlinear transport effects are analyzed taking account of the nonparabolicity of the band structure. The nonparabolic results for the drift velocity in n-type GaAs show good agreement with those from MC simulation and with measured data. It is shown that the nonparabolic balance equations can be used as an alternative theoretical approach to high-field transport in nonparabolic multivalley semiconductors.
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