Abstract

We have fabricated Si MOSFETs having parallel arrays of narrow (0.1 μm) conducting channels. We observe a divergent, nonmetallic decrease of conductance below 30 K that is in excellent quantitative agreement with the one-dimensional version of the combined theories for weak localization and interaction effects. We also observe structure in the conductance as a function of gate voltage that we attribute to random variations of the density of states, rather than the regular variations expected for simple one-dimensional quantization.

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