Abstract
We have studied magnetic and transport properties of a series of Ga 1−x Mn x As GaAs samples with different Mn concentrations ( x = 0.015−0.071. For Mn content higher than about 0.02, carrier(hole)-induced ferromagnetism is observed. Samples with x = 0.035 and 0.043 behave as ferromagnetic dirty metals. With further increase of Mn content above x ∼ 0.05, the zero-field resistivity turns a semiconducting temperature dependence. Very large negative magnetoresistance is observed in non-metallic samples near the metal-nonmetal transitions both in the low and the high Mn content regimes.
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