Abstract
The spin Coulomb drag (SCD) effect occurs in materials and devices where charged carriers with different spins exchange momentum via Coulomb scattering. This causes frictional forces between spin-dependent currents that lead to intrinsic dissipation, which may limit spintronics applications. A nonlocal formulation of SCD is developed which is valid for strongly inhomogeneous systems such as nanoscale spintronics devices. This nonlocal formulation of SCD is successfully applied to linewidths of intersubband spin plasmons in semiconductor quantum wells, where experiments have shown that the local approximation fails.
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