Abstract
In this paper, we have presented electric field dependence of the electron and hole impact ionization coefficients and threshold energies in submicron Si diodes with intrinsic region thicknesses down to 31 nm. To do so, we have used a nonlocal analysis, in order to take the effects of arbitrary distribution of ionization events in both space and time domains and the effects of enhancement in the average speed of those carriers which ionize early in their trajectories as well as nonuniform electric fields in the multiplication region and its surrounding ambient, carrier’s dead space history and its spatial ionization rate, into consideration all in one comprehensive analytic model.
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