Abstract
The behavior of negative-U-centers in high electric fields was considered. It was shown that multiphonon tunnel ionization of negative-U-centers in chalcogenide glassy semiconductors results in a significant increase in the number of conduction electrons, hence, to highly nonlinear current-voltage characteristics. This nonlinearity mechanism well explains the experimentally observed current-voltage characteristic of chalcogenide glassy semiconductors currently used as memory cells.
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