Abstract
A review of the main experimental features of switching and memory effects in chalcogenide glassy semiconductors (CGS), review and analyze of the models of these phenomena was done. An electronic-thermal model of the switching effect taking into account multiphonon tunnel ionization of negative-U centers and heating is presented. The model fits experimental current-voltage characteristics of a GeSbTe films both in ohmic and exponential regions. Also the model is in good agreement with experimental dependences of threshold voltage and threshold current on temperature and thickness. This indicates that multiphonon tunnel ionization of negative-U centers and heating is the most probable mechanism of the switching effect.
Highlights
Since the early 1960s [1,2,3] physics of switching and memory effects in chalcogenides have been widely discussed in many papers but the microscopic mechanism of these phenomena is unknown up to now
It is obvious that to judge the validity of any model it should be compared in details with experimental features but one has to convince that such comparison is absent for the most number of models and uncertainty of the microscopic mechanism of phenomena is due to this absence
In our recent papers we have carried out the comprehensive comparison of switching effect experimental features with electronic-thermal model taking into account a
Summary
Since the early 1960s [1,2,3] physics of switching and memory effects in chalcogenides have been widely discussed in many papers but the microscopic mechanism of these phenomena is unknown up to now. In the present paper it will be enumerated a lot of models which were put forward to explain the switching and memory effects in chalcogenides. If V
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