Abstract
The motion of domain walls is a crucial factor in piezoelectric properties and is usually related to the irreversible and hysteretic behaviors. Herein, we report on the investigation of inverse and transverse piezoelectric coefficients of capacitor-based and microcantilever-based Pb(Zr0.52Ti0.48)O3 films with a change in the DC bias and the AC applied voltage. A large inverse piezoelectric strain coefficient of about 350 p.m./V, and a low strain hysteresis of about 7.1%, are achieved in the film capacitors under a low applied voltage of 2 V (20 kV/cm) which can benefit the actuators for motion control in high-precision systems. The field-dependences of the transverse piezoelectric coefficients, obtained from four-point bending and microcantilever displacement, are in good agreement with each other. The results also reveal that the irreversible domain-wall motion is attributed to the nonlinearity in the field-dependent piezoelectric strain and cantilever displacement.
Highlights
IntroductionThe dielectric and piezo electric properties are dependent on both intrinsic and extrinsic effects [1,2,3,4]
In polycrystalline ferroelectric materials, the dielectric and piezo electric properties are dependent on both intrinsic and extrinsic effects [1,2,3,4]
The intrinsic contributions originate from the atomic displace ments within each unit-cell of the ferroelectric material under an applied electric field, whereas the extrinsic contributions are related to the movement of the ferroelectric domain walls [5,6]
Summary
The dielectric and piezo electric properties are dependent on both intrinsic and extrinsic effects [1,2,3,4]. The intrinsic contributions originate from the atomic displace ments (deformation) within each unit-cell of the ferroelectric material under an applied electric field, whereas the extrinsic contributions are related to the movement of the ferroelectric domain walls [5,6]. The variation of the piezoelectric coefficient with change in applied voltage (AC and DC) has been characterized to show the contribution of domain wall motion to the field-induced piezoelectric strain (reverse piezo electric coefficient) and the transverse piezoelectric coefficient
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