Abstract
Three types of nonlinearity effects can be distinguished in Hall devices: material, geometrical and junction field-effect nonlinearity. Material nonlinearity, a magnetic field dependence of the Hall coefficient, is experimentally characterized for n-type silicon as a function of carrier concentration and temperature. Geometrical nonlinearity, which is due to the short-circuiting effects by the sensor contacts, is related to the geometrical correction factor. It is shown that material and geometrical non-linearity can mutually cancel. Junction field-effect nonlinearity comes about as a modulation of the plate thickness in junction-isolated, integrated Hall devices. The junction field-effect can also be used to compensate nonlinearity.
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